dm c2450uv document number: ds 38197 rev. 1 - 2 1 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = + 25c q1 20v 0.5 ? @ v gs = 4.5v 103 0ma 0.9 ? @ v gs = 1.8 v 74 0ma q2 - 20v 1.0 ? @ v gs = - 4.5v - 700ma 2. 0 ? @ v gs = - 1.8 v - 460ma descript ion this new generation mosfet is designed to minimize the on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? power m anagement f unctions ? battery operated systems and solid - state relays ? load s witch features and benefits ? low on - resistance ? low gate threshold voltage v gs(th) <1v ? low input capacitance ? fast switching speed ? low input/output leakage ? complementary pair mosfet ? ultra - small surface mount p ackage ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot563 ? case material: molded plastic, green mo lding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.00 3 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmc24 5 0uv - 7 sot563 3 , 000/tape & reel dmc24 5 0uv - 13 sot563 10 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (ro hs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green product s are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2015 2016 2017 201 8 201 9 20 20 20 21 code c d e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bo ttom view equivalent circuit ca 5 = product type marking code ym = date code marking y = year (ex: c = 201 5 ) m = month (ex: 9 = september) sot563 top view q1 n - channel q2 p - channel esd protected ca5 ym s 2 d 2 d 1 s 1 g 2 g 1 d1 s1 g1 g ate protection diode d2 s2 g2 g ate protection diode
dm c2450uv document number: ds 38197 rev. 1 - 2 2 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information maximum rating s - q1 n - channel (@ t a = +25c, unless otherwise specified.) character istic symbol value units drain - source voltage v dss 20 v gate - source voltage v gss 12 v continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25c t a = + 70c i d 1 , 0 3 0 800 m a t<10s t a = + 25c t a = + 70c i d 1 , 150 900 m a continuous drain curren t (note 6 ) v gs = 1.8 v steady state t a = + 25c t a = + 70c i d 74 0 57 0 m a t<10s t a = + 25c t a = + 70c i d 87 0 700 m a pulsed drain curren t ( 10 dm 3 a maximum body diode c ontinuous current i s 800 m a maximum ratings - q2 p - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 20 v gate - source voltage v gss 12 v continuous drain current (note 6 ) v gs = - 4.5 v steady state t a = + 25c t a = + 70c i d - 700 - 550 m a t<10s t a = + 25c t a = + 70c i d - 820 - 640 m a continuous drain current (note 6 ) v gs = - 1.8 v steady state t a = + 25c t a = + 70c i d - 460 - 350 m a t<10s t a = + 25c t a = + 70c i d - 550 - 420 m a pulsed drain curren t ( 10 dm - 2 a maximum body diode c ontinuous current i s - 800 m a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 0.45 w thermal resistance, junction to ambient (note 5 ) steady state r ja 281 c/w t<10s 210 c/w total power dissipation (note 6 ) p d 1 w thermal resistance, junction to ambient (note 6 ) steady state r ja 129 c/w t<10s 97 c/w operating and storage temperature range t j, t stg - 55 to +150 c notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate.
dm c2450uv document number: ds 38197 rev. 1 - 2 3 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information electrical characteristics - q1 n - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 20 gs = 0v, i d = 1m a zero gate voltage drain current t j = + 25c i dss ds = 20 v, v gs = 0v gate - source leakage i gss gs = 5v , v ds = 0v gs = 8 v, v ds = 0v on characteristics (note 7 ) gate thre shold voltage v gs(th) 0.5 ds = v gs , i d = 250 a ds(on) gs = 5.0 v, i d = 2 00ma gs = 4.5v, i d = 200 ma gs = 2.5v, i d = 200 ma gs = 1.8 v, i d = 100 m a gs = 1.5 v, i d = 5 0ma gs = 1. 2 v, i d = 1 ma diode forward voltage v sd gs = 0v, i s = 500 ma , dynamic characteristics (note 8 ) input capacitance c iss ds = 1 0 v, v gs = 0v , f = 1.0mhz output cap acitance c oss rss g ds = 0 v, v gs = 0v , total gate charge q g gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs gd d(on) dd = 10 v, v gs = 4.5 v, r l = 47 , r g = 10 d = 200ma turn - on rise time t r d(off) f notes: 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing. 0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 fig. 1 typical output characteristics v , drain-source voltage (v) ds i , d r a i n c u r r e n t ( a ) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 1.2v gs v = 1.8v gs 0 0.5 1.0 1.5 0 0.5 1 1.5 2 2.5 3 i , d r a i n c u r r e n t ( a ) d fig. 2 typical transfer characteristics v , gate source voltage (v) gs v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a
dm c2450uv document number: ds 38197 rev. 1 - 2 4 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 1.8v gs v = 4.5v gs v = 2.5v gs v = 1.5v gs v = 5.0v gs 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = 2.5.v i = 500ma gs d v = 4.5v i = 1.0a gs d 0 0.2 0.4 0.6 0.8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250a d i = 1ma d 0 0.4 0.8 1.2 1.6 0 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0.2 i , s o u r c e c u r r e n t ( a ) s t = 25c a
dm c2450uv document number: ds 38197 rev. 1 - 2 5 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information 0 10 20 30 40 50 60 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) f = 1mhz c iss c oss c rss 0.1 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i , d r a i n - s o u r c e l e a k a g e c u r r e n t ( n a ) d s s t = -55c a t = 85c a t = 125c a t = 150c a t = 25c a 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , g a t e - s o u r c e v o l t a g e ( v ) g s v = 10v i = 250ma ds d 0.01 0.1 1 10 100 v , drain-source voltage (v) fig. 12 soa, safe operation area ds 0.001 0.01 0.1 1 10 i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10 s w
dm c2450uv document number: ds 38197 rev. 1 - 2 6 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information electrical characteristics - q2 p - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss - 20 gs = 0v, i d = - 1m a zero gate voltage drain current t j = + 25c i dss ds = - 20 v, v gs = 0v gate - source leakage i gss gs = 5v , v ds = 0v gs = 8 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) - 0. 5 ds = v gs , i d = - 250 a ds (on) gs = - 5 v, i d = - 100 ma gs = - 4. 5 v, i d = - 100 ma gs = - 2 .5v, i d = - 80 ma gs = - 1 . 8 v, i d = - 40 ma gs = - 1. 5 v, i d = - 30 ma gs = - 1. 2 v, i d = - 1 ma diode forward voltage v sd gs = 0v, i s = - 330 ma , dynam ic characteristics (note 7 ) input capacitance c iss ds = 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , total gate charge v gs = - 4.5 v q g ds = - 10 v, i d = - 250m a total gate charge v gs = - 10 v q g gs gd d(on) dd = - 3 v, v gs = - 2 .5 v, r l = 300 , r g = 25 d = - 1 00ma turn - on rise time t r d(off) f notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recom mended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing. 0 1 2 3 4 5 -v , drain -source voltage (v) ds fig. 13 typical output characteristics - i , d r a i n c u r r e n t ( a ) d 0 0.2 0.4 0.6 0.8 1.0 v = -1.0v gs v = -1.2v gs v = -1.4v gs v = -1.6v gs v = -1.8v gs v = -2.0v gs v = -3.0v gs v = -4.0v gs 0 1 2 3 4 -v , gate source voltage(v) gs fig. 14 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d 0 0.2 0.4 0.6 0.8 1.0 t = 85 c a ? t = 25 c a ? t = -55 c a ? t = 150 c a ? t = 125 c a ? v = 5v ds
dm c2450uv document number: ds 38197 rev. 1 - 2 7 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -i , drain source current fig. 15 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v = 2.5v gs - v = -4.5v gs v = 1.8v gs - 0.1 0.01 0.1 1 10 1 10 -i , drain source current (a) d fig. 16 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = 150 c a t = -55c a t = 85c a t = 125c a t = 25c a v = 4.5v gs 0.6 0.8 1.0 1.2 1.4 1.6 r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 17 on-resistance variation with temperature v = -1.8v gs i = -150ma d v = -4.5v gs i = -4300ma d v = -2.5v gs i = -300ma d v = -4.5v gs i = -430ma d v = -2.5v gs i = -300ma d v = -1.8v gs i = -150ma d -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 18 on-resistance vs.temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.5 1.0 1.5 2.0 0 0.2 0.4 0.6 0.8 1.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 19 gate threshold variation vs. ambient temperature j ? - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250 a d ? i = 300 a d ? 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v , source-drain voltage (v) fig. 20 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s 0 0.2 0.4 0.6 0.8 1.0 t = 25 c a ?
dm c2450uv document number: ds 38197 rev. 1 - 2 8 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information 0 20 40 60 80 c , j u n c t i o n c a p a c i t a n c e ( p f ) t 0 5 10 15 20 -v , drain-source voltage (v) ds fig. 21 typical junction capacitance f = 1mhz c iss c oss c rss 0.1 10 100 1,000 - i , l e a k a g e c u r r e n t ( n a ) d s s 1 -v , drain-source voltage(v) fig. 22 typical drain-source leakage current vs. voltage ds 0 4 8 12 16 20 t = 1 a 25 c ? t = 8 a 5c ? t = 2 a 5c ? t = 1 a 50 c ? 0 1 2 3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 fig. 23 gate-charge characteristics q , total gate charge (nc) g v , g a t e - s o u r c e v o l t a g e ( v ) g s v = -10v i = -250ma ds d 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -v , drain-source voltage (v) fig. 24 soa, safe operation area ds - i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10 s w 0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 25 transient thermal response t , pulse duration time (s) 1 0.00001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 275c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dm c2450uv document number: ds 38197 rev. 1 - 2 9 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02002 at http://www.diodes.com/da tasheets/ap02002.pdf for the latest version. sot 563 dim min max typ a 0.15 0. 30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
dm c2450uv document number: ds 38197 rev. 1 - 2 10 of 10 www.diodes.com september 2015 ? diodes incorporated dm c2450uv new product advance information important notice diodes incorporated makes no warranty of any kind, express or implied, wi th regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the r ight to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this d ocument or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assu me all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoeve r in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its represen tatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specificall y not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems whic h: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers rep resent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or sys tems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerni ng their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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